PBSS301NX,115 NXP Semiconductors, PBSS301NX,115 Datasheet

TRANS NPN 12V 5.3A SOT-89

PBSS301NX,115

Manufacturer Part Number
PBSS301NX,115
Description
TRANS NPN 12V 5.3A SOT-89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS301NX,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
5.3A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
200mV @ 265mA, 5.3A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.3 A
Power Dissipation
2100 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059007115
PBSS301NX T/R
PBSS301NX T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS301NX,115
Manufacturer:
NXP Semiconductors
Quantity:
1 600
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS301PX.
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS301NX
12 V, 5.3 A NPN low V
Rev. 02 — 17 November 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Quick reference data
CEsat
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT89
FE
CEsat
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
C
≤ 1 ms
= 200 mA
= 4 A;
and I
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
28
Product data sheet
Max
12
5.3
10.6
40
Unit
V
A
A

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PBSS301NX,115 Summary of contents

Page 1

PBSS301NX 12 V, 5.3 A NPN low V Rev. 02 — 17 November 2009 1. Product profile 1.1 General description NPN low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PX. 1.2 Features Low collector-emitter ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS301NX 4. Marking Table 4. Type number PBSS301NX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS301NX_2 Product data sheet 12 V, 5.3 A NPN low V Pinning Description emitter collector base Ordering information ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

Page 5

... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) ...

Page 6

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage t delay time d t rise time ...

Page 7

... NXP Semiconductors 1000 h FE (1) 800 (2) 600 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − −55 °C (1) T amb = 25 °C ...

Page 8

... NXP Semiconductors 1 V CEsat (V) −1 10 −2 10 −3 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = − ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS301NX_2 Product data sheet 12 V, 5.3 A NPN low (probe) oscilloscope 450 Ω − Bon Boff Rev. 02 — 17 November 2009 PBSS301NX (BISS) transistor CEsat input pulse ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS301NX [1] For further information and the availability of packing methods, see PBSS301NX_2 Product data sheet 12 V, 5.3 A NPN low V 4 ...

Page 11

... NXP Semiconductors 11. Soldering 0.85 1.20 4.60 1.20 Fig 16. Reflow soldering footprint SOT89 (SC-62) Not recommended for wave soldering Fig 17. Wave soldering footprint SOT89 (SC-62) PBSS301NX_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1. (3x) 3.70 3.95 6.60 2. 1.50 ...

Page 12

... NXP Semiconductors 12. Mounting 40 mm 3.96 mm PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al footprint SOT89 (SC-62) PBSS301NX_2 Product data sheet 12 V, 5.3 A NPN low 1.6 mm 001aaa234 O , standard 2 3 Rev. 02 — 17 November 2009 PBSS301NX ...

Page 13

... Document ID Release date PBSS301NX_2 20091117 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering footprint SOT89 • ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...

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