PXTA14,115 NXP Semiconductors, PXTA14,115 Datasheet

TRANS NPN 30V 500MA SOT89

PXTA14,115

Manufacturer Part Number
PXTA14,115
Description
TRANS NPN 30V 500MA SOT89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PXTA14115.pdf (7 pages)

Specifications of PXTA14,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1.3W
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
500 mA
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933834420115
PXTA14 T/R
PXTA14 T/R
Product data sheet
Supersedes data of 1999 Apr 14
dbook, halfpage
DATA SHEET
PXTA14
NPN Darlington transistor
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 09

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PXTA14,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage PXTA14 NPN Darlington transistor Product data sheet Supersedes data of 1999 Apr 14 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 09 ...

Page 2

... NXP Semiconductors NPN Darlington transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complement: PXTA64. MARKING TYPE NUMBER PXTA14 *1N Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors NPN Darlington transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation tot T storage temperature ...

Page 4

... NXP Semiconductors NPN Darlington transistor 80000 handbook, full pagewidth h FE 60000 40000 20000 0 − 2004 Dec Fig.2 DC current gain; typical values. 4 Product data sheet PXTA14 MGD837 (mA) ...

Page 5

... NXP Semiconductors NPN Darlington transistor PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4.6 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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