BST51,115 NXP Semiconductors, BST51,115 Datasheet - Page 3

• Manufacturer Part Number: BST51,115
• Description: TRANS NPN 60V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST51,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933644260115; BST51 T/R; BST51 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Dec 09
V
V
V
I
I
I
P
T
T
T
R
R
C
CM
B
SYMBOL
SYMBOL
j
amb
stg
CBO
CES
EBO
tot
th(j-a)
th(j-s)
NPN Darlington transistors
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BST50
BST51
BST52
BST50
BST51
BST52
PARAMETER
PARAMETER
open emitter
V
open collector
T
amb
BE
= 0 V
25 C; note 1
3
CONDITIONS
note 1
CONDITIONS
BST50; BST51; BST52
65
65
MIN.
VALUE
96
16
60
80
90
45
60
80
5
1
2
100
1.3
150
+150
+150
Product specification
MAX.
UNIT
K/W
K/W
V
V
V
V
V
V
V
A
A
mA
W
C
C
C
2
2
UNIT
.
.