STX83003 STMicroelectronics, STX83003 Datasheet

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STX83003

Manufacturer Part Number
STX83003
Description
TRANS NPN 400V 1A TO-92
Manufacturer
STMicroelectronics
Datasheet

Specifications of STX83003

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 500mA
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
16 @ 350mA, 5V
Power - Max
1.5W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation Pd
1.5W
Dc Collector Current
500mA
Dc Current Gain Hfe
25
Transistor Case Style
TO-92
No. Of Pins
3
Svhc
No
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STX83003
Manufacturer:
ST
Quantity:
8 755
Part Number:
STX83003
Manufacturer:
ST
0
Part Number:
STX83003-AP
Manufacturer:
ST
0
APPLICATIONS:
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX93003, its
complementary PNP transistor.
ABSOLUTE MAXIMUM RATINGS
October 2002
Symbol
ST83003 SILICON IN TO-92 PACKAGE
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage
(I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
C
= 0, I
B
= 0.5 A, t
technology for high
Parameter
p
C
p
< 5 ms)
= 25
< 10 s, T
p
< 5 ms)
B
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
j
< 150
o
C)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
V
Value
(BR)EBO
700
400
150
0.5
1.5
1.5
TO-92
1
3
STX83003
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/7

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STX83003 Summary of contents

Page 1

... It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX93003, its complementary PNP transistor. ...

Page 2

... STX83003 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE RESISTIVE LOAD t Rise Time ...

Page 3

... Safe Operating Area DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage STX83003 3/7 ...

Page 4

... STX83003 Resistive Load Fall Time Inductive Load Fall Time Reverse Biased SOA 4/7 Resistive Load Storage Time Inductive Load Storage Time ...

Page 5

... Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor STX83003 5/7 ...

Page 6

... STX83003 DIM. MIN. A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 1. degree 6/7 TO-92 MECHANICAL DATA mm TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree 4 degree inch MIN. TYP. MAX. 0.170 0.195 0.014 0.020 0.175 ...

Page 7

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com STX83003 7/7 ...

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