MJD31CT4 STMicroelectronics, MJD31CT4 Datasheet

TRANSISTOR NPN 100V 3A DPAK

MJD31CT4

Manufacturer Part Number
MJD31CT4
Description
TRANSISTOR NPN 100V 3A DPAK
Manufacturer
STMicroelectronics
Type
Amplifier, Powerr
Datasheets

Specifications of MJD31CT4

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
15 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
20
Current, Collector
3 A
Current, Gain
50
Package Type
TO-252
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
1.2 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2484-2

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Order codes
General features
Applications
Description
The device is manufactured in Planar technology
with “Base Island” layout. The resulting transistor
shows
coupled with very low saturation voltage.
Part Number
MJD31CT4
Surface-mounting TO-252 power package in
tape & reel
In compliance with the 2002/93/EC European
Directive
General purpose switching and amplifier
transistor
exceptional
MJD31C
Marking
high
gain
performance
Package
DPAK
Low voltage NPN power transistor
Internal schematic diagram
TO-252
DPAK
MJD31CT4
Tape & reel
1
Packing
3
1/9
9

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MJD31CT4 Summary of contents

Page 1

... Island” layout. The resulting transistor shows exceptional high coupled with very low saturation voltage. Order codes Part Number Marking MJD31CT4 MJD31C Low voltage NPN power transistor Internal schematic diagram gain performance Package DPAK MJD31CT4 3 1 DPAK TO-252 Packing Tape & reel 1/9 9 ...

Page 2

... CBO V Collector-base voltage (I CEO V Emitter-base voltage (I EBO I Collector current C I Collector peak current CM I Base current B P Total dissipation at T TOT T Storage temperature stg T Max. operating junction temperature J 2/9 Parameter = 25°C c MJD31CT4 Value Unit 100 V 100 -65 to 150 °C 150 °C ...

Page 3

... MJD31CT4 2 Electrical characteristics (T = 25°C unless otherwise specified) case Table 2. Electrical characteristics Symbol Collector cut-off current I CES (V BE Collector cut-off current I CEO ( Emitter cut-off current I EBO ( Collector-emitter (1) V CEO(sus) sustaining voltage ( (1) V Collector-emitter CE(sat) saturation voltage (1) Base-emitter on voltage V BE(on current gain FE Note (1) Pulsed duration = 300 µ ...

Page 4

... These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. 6/9 MJD31CT4 ...

Page 5

... MJD31CT4 DIM TO-252 (DPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.8 0.60 1. Package mechanical data inch MIN. TYP. MAX. 0.087 ...

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