STX112-AP STMicroelectronics, STX112-AP Datasheet
STX112-AP
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STX112-AP Summary of contents
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... EQUIPMENT DESCRIPTION The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package intented for use in linear and switching applications. Ordering codes: STX112 (shipment in bulk) STX112-AP (shipment in ammopack) ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I ...
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... STX112 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEO Current ( Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage Current Gain FE Pulsed: Pulse duration = 300 s, duty cycle 1.5 % ...
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... DC Current Gain Base-Emitter Saturation Voltage Freewheel Diode Forward Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage STX112 3/5 ...
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... STX112 DIM. MIN. A 4.58 B 4.45 C 3 0.4 G 0.35 4/5 TO-92 MECHANICAL DATA mm TYP. MAX. 5.33 5.2 4.2 1.27 0.51 inch MIN. TYP. MAX. 0.180 0.210 0.175 0.204 0.126 0.165 0.500 0.050 0.016 0.020 0.14 ...
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