2N2905A STMicroelectronics, 2N2905A Datasheet

TRANSISTOR PNP -60V -0.6A TO-39

2N2905A

Manufacturer Part Number
2N2905A
Description
TRANSISTOR PNP -60V -0.6A TO-39
Manufacturer
STMicroelectronics
Type
Small Signal, Switchr
Datasheets

Specifications of 2N2905A

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
600mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
0.6 W
Maximum Operating Frequency
200 MHz
Dc Collector/base Gain Hfe Min
50
Current, Collector
-0.6 A
Current, Collector Cutoff
-10 nA
Current, Gain
300
Frequency
200 MHz
Package Type
TO-39
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature, Junction, Maximum
175 °C
Thermal Resistance, Junction To Ambient
250 °C⁄W
Voltage, Breakdown, Collector To Base
-60 V
Voltage, Breakdown, Collector To Emitter
-60 V
Voltage, Breakdown, Emitter To Base
-5 V
Voltage, Collector To Base
-60 V
Voltage, Collector To Emitter
-60 V
Voltage, Collector To Emitter, Saturation
-1.6 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2572-5

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Price
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DESCRIPTION
The 2N2905A and 2N2907A are silicon Planar
Epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated
applications.
ABSOLUTE MAXIMUM RATINGS
February 2003
Symbol
V
V
V
T
P
I
CBO
CEO
EBO
I
CM
T
stg
C
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
switching
and
for 2N2905A
for 2N2907A
at T
for 2N2905A
for 2N2907A
Parameter
general
C
amb
C
p
25
E
= 0)
< 5 ms)
= 0)
25
SMALL SIGNAL PNP TRANSISTORS
B
o
= 0)
C
o
C
purpose
INTERNAL SCHEMATIC DIAGRAM
TO-18
-65 to 175
Value
-0.6
-0.8
175
-60
-60
0.6
0.4
1.8
-5
3
2N2905A
2N2907A
TO-39
Unit
o
o
W
W
W
W
V
V
V
A
A
C
C
1/7

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2N2905A Summary of contents

Page 1

... DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEX Current (V = 0.5V Base Cut-off Current BEX (V = 0.5V Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ...

Page 3

... Normalized DC Current Gain. Collector Base and Emitter-base capacitances. 2N2905A/2N2907A Collector Emitter Saturation Voltage. Switching Characteristics. 3/7 ...

Page 4

... Test Circuit for PULSE GENERATOR : t 2 Frequency = 150 Test Circuit for off o f PULSE GENERATOR : t 2 Frequency = 150 4/7 TO OSCILLOSCOPE : t < 5 > OSCILLOSCOPE : t < 5 > 100 M IN ...

Page 5

... TO-18 MECHANICAL DATA DIM. MIN 2. TYP. MAX. MIN. 12.7 0.49 5.3 4.9 5.8 0.100 1.2 1.16 L 2N2905A/2N2907A inch TYP. MAX. 0.500 0.019 0.208 0.193 0.228 0.047 0.045 0016043 5/7 ...

Page 6

... DIM. MIN 6/7 TO-39 MECHANICAL DATA mm TYP. MAX. 0.49 6.6 8.5 9.4 1.2 0 (typ inch MIN. TYP. MAX. 0.500 0.019 0.260 0.334 0.370 0.200 0.047 0.035 A P008B ...

Page 7

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