SMBT2222AE6327 Infineon Technologies, SMBT2222AE6327 Datasheet

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NPN Silicon Switching Transistor Low collector-emitter saturation voltage Complementary type: SMBT2907AW (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBT2222A/MMBT2222A s1P Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation °C ...

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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...

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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

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Test circuit Delay and rise time 9 Storage and fall time ~100 s < 16 -13.8 ~ 500 s Oscillograph: R > 100 , C < 12pF, t 200 619 0.5 V 200 1 ...

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DC current gain SMBT 2222 150 ˚C 25 ˚ -50 ˚ Transition frequency f = ...

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Total power dissipation P 360 mW 300 270 240 210 180 150 120 Delay time Rise time SMBT ...

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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...