BFN 38 E6327 Infineon Technologies, BFN 38 E6327 Datasheet

TRANSISTOR RF NPN 300V SOT-223

BFN 38 E6327

Manufacturer Part Number
BFN 38 E6327
Description
TRANSISTOR RF NPN 300V SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFN 38 E6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 30mA, 10V
Power - Max
1.5W
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Configuration
Dual Common Base
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
70 MHz
Collector- Emitter Voltage Vceo Max
300 V
Continuous Collector Current
0.2 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFN38E6327XT
SP000011006
NPN Silicon High-Voltage Transistors
Type
BFN38
Thermal Resistance
Parameter
Junction - soldering point
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
For calculation of R
S
Suitable for video output stages TV sets
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BFN39 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
and switching power supplies
124 °C
thJA
please refer to Application Note Thermal Resistance
Marking
BFN38
2)
1=B
1)
2=C
Pin Configuration
1
3=E
Symbol
R
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
4=C
4
-
-65 ... 150
Value
Value
300
300
200
500
100
200
150
1.5
-
6
17
Package
SOT223
2007-03-29
BFN38
Unit
V
mA
W
°C
Unit
K/W
1
2
3

Related parts for BFN 38 E6327

BFN 38 E6327 Summary of contents

Page 1

NPN Silicon High-Voltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN39 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BFN38 BFN38 Maximum Ratings ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage I = 100 µ ...

Page 3

DC current gain BFN 36/ Collector cutoff current I CBO ...

Page 4

Collector-base capacitance C Emitter-base capacitance CEB Permissible Pulse Load totmax totDC p BFN 36/ tot max 5 ...

Page 5

Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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