BCP 56-16 E6327 Infineon Technologies, BCP 56-16 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCP 56-16 E6327
• Description: TRANSISTOR NPN AF 80V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 56-16 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 80 V
• Continuous Collector Current: 1 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP5616E6327XT; SP000010706

h
DC current gain h
V
Base-emitter saturation voltage
I
Ι
C
FE
C
CE
= ƒ (V
10
10
10
10
= 2 V
5
5
5
mA
10
10
10
10
10
3
2
1
0
10
4
2
1
0
BCP 54...56
0
100
0
BEsat
25 C
BCP 54...56
-50 C
C
), h
0.2
10
FE
1
FE
0.4
= 10
100
= ƒ (I
-50 C
25 C
10
0.6
2
C
C
)
0.8
10
3
V
EHP00268
Ι
mA
V
EHP00270
BEsat
C
10
1.2
4
4
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
Ι
C
CBO
C
CBO
= ƒ (V
10
mA
10
10
10
10
10
nA
10
10
10
10
10
= 30 V
4
3
2
1
0
4
3
2
1
0
-1
CEsat
0
BCP 54...56
0
BCP 54...56
), h
0.2
FE
100
-50
25 C
50
= 10
BCP54...-BCP56...
C
C
0.4
max
CBO
100
= ƒ (T
2008-10-10
0.6
typ
V
T
A
CEsat
EHP00269
EHP00271
A
C
V
)
150
0.8