BSP 60 H6327 Infineon Technologies, BSP 60 H6327 Datasheet - Page 2

• Manufacturer Part Number: BSP 60 H6327
• Description: TRANS PNP DARL 45V 1A SOT223
• Manufacturer: Infineon Technologies

Specifications of BSP 60 H6327

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 1.8V @ 1mA, 1A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-emitter cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
AC Characteristics
Transition frequency
I
1
2
C
C
C
C
C
C
E
C
C
C
C
C
C
C
For calculation of R thJA please refer to Application Note Thermal Resistance
Pulse test: t < 300µs; D < 2%
CE
EB
= 100 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 1 A, I
= 500 mA, I
= 1 A, I
= 100 mA, V
= 4 V, I
= V
CE0max
B
B
= 1 mA
= 1 mA
C
B
B
B
C
E
E
E
= 0
B
B
= 0 , BSP60
= 0 , BSP61
= 0 , BCP62
CE
CE
CE
= 0 , BSP60
= 0 , BSP61
= 0 , BSP62
= 0
2)
, V
= 0.55 mA
= 0.5 mA
= 10 V
= 10 V
= 5 V, f = 100 MHz
BE
= 0
1)
2)
A
= 25°C, unless otherwise specified
2)
2
f
Symbol
R
Symbol
V
V
V
I
I
h
V
V
T
CES
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
1000
2000
min.
45
60
80
60
80
90
5
-
-
-
-
-
-
-
Values
Value
typ.
200
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSP60-BSP62
max.
1.3
1.8
1.9
2.2
10
10
2007-04-26
-
-
-
-
-
-
-
-
-
-
MHz
Unit
K/W
Unit
V
µA
µA
-
V