BDP 949 E6327 Infineon Technologies, BDP 949 E6327 Datasheet - Page 3

• Manufacturer Part Number: BDP 949 E6327
• Description: TRANSISTOR NPN AF 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BDP 949 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 60 V
• Continuous Collector Current: 3 A
• Power Dissipation: 5 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BDP 949 E6327; BDP949E6327INTR; BDP949E6327XT; SP000010932

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
2
C
C
C
C
C
C
E
C
C
C
C
C
C
C
For calculation of R thJA please refer to Application Note Thermal Resistance
Pulse test: t < 300µs; D < 2%
CB
CB
EB
CB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 0 , I
= 10 mA, V
= 500 mA, V
= 2 A, V
= 2 A, V
= 2 A, I
= 2 A, I
= 50 mA, V
= 4 V, I
= 45 V, I
= 45 V, I
= 10 V, f = 1 MHz
E
B
B
= 100 µA, BDP953
CE
CE
= 0.2 A
= 0.2 A
C
C
B
B
B
E
E
E
E
= 0
CE
CE
= 2 V, BDP947, BDP949
= 2 V, BDP953
= 0
= 0 , BDP947
= 0 , BDP949
= 0 , BDP953
= 0
= 0 , T
CE
= 0 , BDP947
= 0 , BDP949
2)
= 5 V
= 10 V, f = 100 MHz
= 1 V
A
= 150 °C
2)
A
= 25°C, unless otherwise specified
2)
3
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
cb
BDP947, BDP949, BDP953
min.
100
120
100
45
60
45
60
25
50
15
5
-
-
-
-
-
-
-
Values
typ.
100
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
475
100
0.1
0.5
1.3
20
2009-05-28
-
-
-
-
-
-
-
-
-
-
-
-
MHz
pF
Unit
V
µA
nA
-
V