BDP 949 E6327 Infineon Technologies, BDP 949 E6327 Datasheet - Page 4

• Manufacturer Part Number: BDP 949 E6327
• Description: TRANSISTOR NPN AF 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BDP 949 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 60 V
• Continuous Collector Current: 3 A
• Power Dissipation: 5 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BDP 949 E6327; BDP949E6327INTR; BDP949E6327XT; SP000010932

DC current gain h
V
Base-emitter saturation voltage
I
C
CE
= ( V
mA
10
10
10
10
10
10
10
10
10
= 2 V
-
3
2
1
0
4
3
2
1
0
10
0
BEsat
0
0.2
), h
10
FE
0.4
1
= 10
FE
= ƒ ( I
-55°C
0.6
100°C
25°C
10
2
C
0.8
)
10
1
3
-50°C
25°C
100°C
I
V
V
C
mA
BEsat
1.3
10
4
4
Collector-emitter saturation voltage
I
Collector current I
V
C
CE
= ƒ ( V
mA
mA
10
10
10
10
10
10
10
10
10
10
= 2 V
4
3
2
1
0
4
3
2
1
0
0
0
CEsat
BDP947, BDP949, BDP953
0.2
0.1
), h
FE
0.4
0.2
= 10
C
100°C
25°C
-50°C
= ƒ ( V
0.6
0.3
BE
0.8
0.4
)
2009-05-28
1
V
-50°C
25°C
100°C
V
V
V
CEsat
BE
0.6
1.3