MPSA92,412 NXP Semiconductors, MPSA92,412 Datasheet - Page 3

• Manufacturer Part Number: MPSA92,412
• Description: TRANS PNP 300V 500MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of MPSA92,412

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933431190412; MPSA92P; MPSA92P

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Aug 20
R
I
I
h
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
PNP high-voltage transistor
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
V
I
I
I
f = 100 MHz
E
C
C
C
E
C
CE
I
I
I
= 0; V
=i
= 0; V
= −20 mA; I
= −20 mA; I
= −10 mA; V
C
C
C
e
= −10 V; note 1
= −1 mA
= −10 mA
= −30 mA
= 0; V
3
CB
BE
note 1
= −200 V
= −3 V
CB
CONDITIONS
B
B
CONDITIONS
= −20 V; f = 1 MHz
CE
= −2 mA; note 1
= −2 mA; note 1
= −20 V;
VALUE
−
−
25
40
25
−
−
−
50
MIN.
200
Product data sheet
−250
−100
−
−
−
−500
−900
6
−
MAX.
MPSA92
UNIT
K/W
nA
nA
mV
mV
pF
MHz
UNIT