BUR51 STMicroelectronics, BUR51 Datasheet
BUR51
Specifications of BUR51
Related parts for BUR51
BUR51 Summary of contents
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... HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I ...
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... BUR51 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-base Voltage EBO ( Collector-emitter CE(sat) Saturation Voltage V Base-emitter BE(sat) Saturation Voltage h DC Current Gain ...
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... TYP. 13.1 0.433 0.461 1.6 0.057 0.059 2.92 0.106 9.4 0.350 20 0.748 11.1 0.421 0.429 17.2 0.650 0.665 26 0.984 4.2 0.153 39.3 1.516 30.3 1.181 1.187 BUR51 MAX. 0.516 0.063 0.115 0.370 0.787 0.437 0.677 1.024 0.165 1.547 1.193 P003I 3/4 ...
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... BUR51 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...