TRANSISTOR NPN ISOWATT218

BU508AFI

Manufacturer Part NumberBU508AFI
DescriptionTRANSISTOR NPN ISOWATT218
ManufacturerSTMicroelectronics
BU508AFI datasheet
 

Specifications of BU508AFI

Transistor TypeNPNCurrent - Collector (ic) (max)8A
Voltage - Collector Emitter Breakdown (max)700VVce Saturation (max) @ Ib, Ic1V @ 2A, 4.5A
Current - Collector Cutoff (max)1mAPower - Max50W
Frequency - Transition7MHzMounting TypeThrough Hole
Package / CaseISOWATT-218-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce-  
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STMicroelectronics PREFERRED
SALESTYPES
HIGH VOLTAGE CAPABILITY (> 1500 V)
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured
using
Multiepitaxial
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
P
Total Dissipation at T
tot
V
Insulation Withstand Voltage (RMS) from All
isol
Three Leads to Exernal Heatsink
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
April 2002
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
Mesa
TO-218
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
= 0)
B
= 0)
C
< 5 ms)
p
BU208A
TO - 3
o
= 25
C
c
-65 to 175 -65 to 150
BU208A
BU508A/BU508AFI
TO-3
1
2
3
2
1
ISOWATT218
For TO-3 :
C = Tab
E = Pin2.
Value
1500
700
10
8
15
BU508A
BU508AFI
TO - 218 ISOWATT218
150
125
50
2500
-65 to 150
175
150
150
3
2
1
Unit
V
V
V
A
A
W
V
o
C
o
C
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BU508AFI Summary of contents

  • Page 1

    ... HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS ...

  • Page 2

    ... BU208A / BU508A / BU508AFI THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage INDUCTIVE LOAD t Storage Time ...

  • Page 3

    ... Derating Curves (TO-3) DC Current Gain Base Emitter Saturation Voltage BU208A / BU508A / BU508AFI Derating Curves (TO-218/ISOWATT218) Collector Emitter Saturation Voltage Switching Time Inductive Load 3/8 ...

  • Page 4

    ... BU208A / BU508A / BU508AFI Switching Time Inductive Load Figure 1: Inductive Load Switching Test Circuit. 4/8 ...

  • Page 5

    ... BU208A / BU508A / BU508AFI inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 P003F 5/8 ...

  • Page 6

    ... BU208A / BU508A / BU508AFI TO-218 (SOT-93) MECHANICAL DATA DIM. MIN. A 4 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø 6/8 mm TYP. MAX. 4.9 1.37 2.5 0.78 1.3 11.1 15.2 16.2 18 4.15 31 12.2 4 ¯ R inch MIN. TYP. MAX. 0.185 0.193 0.046 0.054 0.098 ...

  • Page 7

    ... BU208A / BU508A / BU508AFI inch TYP. MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 0.835 0.783 0.929 1.673 0.207 ...

  • Page 8

    ... BU208A / BU508A / BU508AFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...