SMBT 3906 E6767 Infineon Technologies, SMBT 3906 E6767 Datasheet

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SMBT 3906 E6767

Manufacturer Part Number
SMBT 3906 E6767
Description
TRANSISTOR PNP SW SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of SMBT 3906 E6767

Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
330mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
SMBT3906E6767XT
SP000011677
PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3906S and SMBT3906U:
• Complementary types:
• SMBT3904S / U: for orientation in reel
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT3906S/U
Type
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
1
Pb-containing package may be available upon special request
TR1
Two (galvanic) internal isolated transistor
with good matching in one package
SMBT3904...MMBT3904 (NPN)
see package information below
C1
E1
6
1
B2
B1
5
2
E2
C2
4
3
EHA07175
TR2
Marking
s2A
s2A
s2A
1)
1=B
1=E1
1=E1
2=E
2=B1
2=B1
1
Pin Configuration
3=C
3=C2
3=C2
-
4=E2
4=E2
SMBT3906...MMBT3906
-
5=B2
5=B2
-
6=C1
6=C1
Package
SOT23
SOT363
SC74
2008-02-29

Related parts for SMBT 3906 E6767

SMBT 3906 E6767 Summary of contents

Page 1

PNP Silicon Switching Transistors • High DC current gain: 0 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- ≤ 71 ° ≤ tbd ° ≤ 115 ° ≤ 105 ° Junction temperature Storage temperature Thermal Resistance ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 5

Test circuit Delay and rise time <1 300 ns Storage and fall time <1 -10 < < 500 Ω +0 -10.6 V ...

Page 6

DC current gain 125 - Collector-base capacitance C Emitter-base capacitance C ...

Page 7

Total power dissipation P SMBT3906S 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load = ƒ( totmax totDC tot max ...

Page 8

Permissible Pulse Load = ƒ( totmax totDC p SMBT3906S 0.005 0.01 0.02 0.05 0.1 0.2 0 Permissible ...

Page 9

Storage time t ) stg 125 ƒ(I Rise time t ) ...

Page 10

Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...

Page 11

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 12

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 13

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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