SMBT 3906 E6767 Infineon Technologies, SMBT 3906 E6767 Datasheet - Page 6

• Manufacturer Part Number: SMBT 3906 E6767
• Description: TRANSISTOR PNP SW SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBT 3906 E6767

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: SMBT3906E6767XT; SP000011677

h
DC current gain h
V
Collector-base capacitance C
Emitter-base capacitance C
FE
CE
10
pF
10
10
= 1 V
6.5
5.5
4.5
3.5
2.5
1.5
5
5
-1
8
7
6
5
4
3
2
1
1
0
0
10
-1
4
5
10
FE
8
0
CEB
= ƒ(I
125 C
-55 C
25 C
12
5
C
10
)
eb
1
cb
16
= ƒ(V
mA
Ι
= ƒ(V
C
V
EHP00774
C
EB
10
CB
CB
CCB
)
2
/C
22
)
EB
6
Saturation voltage I
h
Total power dissipation P
SMBT3906/ MMBT3906
Ι
FE
C
mW
= 10
360
300
270
240
210
180
150
120
mA
10
10
10
90
60
30
2
0
5
5
0
2
1
0
0
15
0.2
V
30
SMBT3906...MMBT3906
CE
45
0.4
60
C
= ƒ(V
75
0.6
90 105 120
tot
BEsat
0.8
= ƒ(T
V
BE sat
2008-02-29
V
; V
BE
1.0
S
V ,
CEsat
EHP00767
)
T
°C
CE sat
S
V
150
1.2
)