TRANS DARL NPN 350V 10A TO-218

BU323Z

Manufacturer Part NumberBU323Z
DescriptionTRANS DARL NPN 350V 10A TO-218
ManufacturerON Semiconductor
BU323Z datasheet
 


Specifications of BU323Z

Transistor TypeNPN - DarlingtonCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)350VVce Saturation (max) @ Ib, Ic1.7V @ 250mA, 10A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce500 @ 5A, 4.6V
Power - Max150WFrequency - Transition2MHz
Mounting TypeThrough HolePackage / CaseSOT-93, TO-218 (Straight Leads)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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I
C
I
= 6.5 A
NOM
Output transistor turns on: I
High Voltage Circuit turns on: I
= 20 mA
C
= 100 μA
Avalanche diode turns on: I
C
250 V
300 V
Icer Leakage Current
Figure 1. I
= f(V
) Curve Shape
C
CE
By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the I
= f(V
C
an unfamiliar shape compared to standard products as
shown in Figure 1.
10
0.1
0.01
0.001
= 40 mA
C
I
CURRENT
B
SOURCE
V
CE
340 V
V
NOMINAL
CLAMP
= 400 V
The bias parameters, V
the inductance, are applied according to the Device Under
Test (DUT) specifications. V
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
) curve exhibits
specified in the device parameter section. The device can
CE
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
I
= 7.0 A, I
C(peak)
= 100 Ω, V
R
BE
1 ms
T
= 25°C
C
1
10 ms
250 ms
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V
CEO
10
100
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 3. Forward Bias Safe Operating Area
http://onsemi.com
3
L INDUCTANCE
MERCURY CONTACTS
(8 mH)
WETTED RELAY
V
CE
MONITOR
(V
)
GATE
= 100 Ω
R
BE
I
C
MONITOR
V
BEoff
I
SOURCE
B2
Figure 2. Basic Energy Test Circuit
, I
, V
, I
CLAMP
B1
BE(off)
and I
are monitored by the
CE
C
H = 5.0 A, I
L = 100 mA, I
C
C
B
= 280 V, L = 8.0 mH
gate
300 μs
340 V
1000
I
CURRENT
C
SOURCE
0.1 Ω
NON
INDUCTIVE
, I
, and
B2
C
= 100 mA,