PDTC115TT,215 NXP Semiconductors, PDTC115TT,215 Datasheet - Page 2

TRANS NPN W/RES 50V SOT-23

PDTC115TT,215

Manufacturer Part Number
PDTC115TT,215
Description
TRANS NPN W/RES 50V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC115TT,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
100 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2148-2
934058193215
PDTC115TT T/R
Philips Semiconductors
2. Pinning information
9397 750 14021
Product data sheet
Table 3:
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23, SOT323, SOT346, SOT416
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 04 — 17 February 2005
NPN resistor-equipped transistors; R1 = 100 k , R2 = open
Simplified outline
1
2
PDTC115T series
1
Transparent
top view
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
3
001aab348
006aaa144
001aab347
001aab447
2
3
3
1
2
1
2
3
1
2
3
Symbol
1
1
1
1
1
R1
R1
R1
R1
R1
006aaa218
006aaa218
006aaa218
sym012
sym012
2 of 10
2
3
2
3
2
3
3
2
3
2

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