PDTC123EE,115 NXP Semiconductors, PDTC123EE,115 Datasheet - Page 3

• Manufacturer Part Number: PDTC123EE,115
• Description: TRANS NPN W/RES SOT-416
• Manufacturer: NXP Semiconductors

Specifications of PDTC123EE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2150-2; 934058173115; PDTC123EE T/R

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 06
PDTC123ES
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123ET
PDTC123EU
PDTC123EM
TYPE NUMBER
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
Top view
1
2
1
1
2
3
bottom view
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MHC506
MAM364
3
1
1
1
R1
R1
R2
R2
R1
MDB269
R2
3
2
3
2
2
3
PDTC123E series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION