PDTC114YE,115 NXP Semiconductors, PDTC114YE,115 Datasheet

TRANS NPN W/RES 50V SOT-490

PDTC114YE,115

Manufacturer Part Number
PDTC114YE,115
Description
TRANS NPN W/RES 50V SOT-490
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC114YE,115

Package / Case
SC-75, SOT-416
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
150mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
10 KOhm
Typical Resistor Ratio
0.213
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934054814115
PDTC114YE T/R
PDTC114YE T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDTC114YE,115
Manufacturer:
NXP Semiconductors
Quantity:
20 000
Product data sheet
Supersedes data of 2003 Sep 10
DATA SHEET
PDTC114Y series
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
DISCRETE SEMICONDUCTORS
2004 Aug 17

Related parts for PDTC114YE,115

PDTC114YE,115 Summary of contents

Page 1

DATA SHEET PDTC114Y series NPN resistor-equipped transistors kΩ kΩ Product data sheet Supersedes data of 2003 Sep 10 DISCRETE SEMICONDUCTORS 2004 Aug 17 ...

Page 2

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. ...

Page 3

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC114YS handbook, halfpage PDTC114YE PDTC114YEF handbook, halfpage PDTC114YK PDTC114YT PDTC114YU Top view PDTC114YM handbook, halfpage 2004 Aug 17 SIMPLIFIED OUTLINE AND SYMBOL MAM364 bottom view MHC506 3 PDTC114Y series ...

Page 4

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO V input voltage I positive negative I output current (DC peak collector current CM P total power dissipation ...

Page 5

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat V input-off voltage i(off) V input-on voltage i(on) ...

Page 6

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ PACKAGE OUTLINES Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 0.95 mm 0.1 0.15 0.10 0.60 OUTLINE VERSION IEC SOT416 2004 Aug 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 0.7 1 ...

Page 7

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 1.3 0.1 0.50 0.26 mm 1.0 0.013 0.35 0.10 OUTLINE VERSION IEC SOT346 2004 Aug scale 3.1 1.7 3.0 1.9 0.95 2.7 1.3 2.5 REFERENCES ...

Page 8

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 ...

Page 9

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 10

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Aug scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 11

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2004 Aug scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 ...

Page 12

... NXP Semiconductors NPN resistor-equipped transistors kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 0.8 0.33 0.2 1.7 mm 0.6 0.23 0.1 1.5 OUTLINE VERSION IEC SOT490 2004 Aug scale 0.95 1.7 0.5 1.0 0.5 0.75 1.5 0.3 REFERENCES ...

Page 13

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 14

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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