PDTA114YT,215 NXP Semiconductors, PDTA114YT,215 Datasheet - Page 4

TRANS PNP 50V 100MA SOT23

PDTA114YT,215

Manufacturer Part Number
PDTA114YT,215
Description
TRANS PNP 50V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA114YT,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 KOhm
Typical Resistor Ratio
0.213
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055236215
PDTA114YT T/R
PDTA114YT T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDTA114YT,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 02
V
V
V
V
I
I
P
T
T
T
R
O
CM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
PARAMETER
PARAMETER
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
amb
≤ 25 °C
4
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
CONDITIONS
−65
−65
MIN.
VALUE
PDTA114Y series
250
500
500
625
500
500
833
−50
−50
−10
+6
−40
−100
−100
500
250
250
200
250
250
150
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
UNIT

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