PDTA143XT,215 NXP Semiconductors, PDTA143XT,215 Datasheet - Page 10

• Manufacturer Part Number: PDTA143XT,215
• Description: TRANS NPN 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTA143XT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 4.7 KOhm
• Typical Resistor Ratio: 0.476
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055053215; PDTA143XT T/R; PDTA143XT T/R

NXP Semiconductors
10. Revision history
Table 10.
PDTA143X_SER_4
Product data sheet
Document ID
PDTA143X_SER_4
Modifications:
PDTA143X_SERIES_3
PDTA143X_SERIES_2
PDTA143XEF_1
PDTA143XK_1
PDTA143XE_1
PDTA143XT_1
Revision history
Release date
20070416
20040804
20030410
20020314
20020115
19990420
19990420
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PDTA143XEF removed
Section 1.2
Section 1.3
Table 4 “Ordering
Table 5 “Marking
Table 6 “Limiting
Table 6 “Limiting
Table 8
Table 8
Figure
Figure
Section 9 “Packing
Section 11 “Legal
1, 2, 3, 4,
5, 6, 7, 8,
“Characteristics”: V
“Characteristics”: V
“Features”: amended
“Applications”: amended
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
Product specification
values”: typing error for value V
values”: I
9
11
codes”: enhanced table note section
information”: added
information”: updated
Rev. 04 — 16 April 2007
and 10: added
information”: added
and 12: superseded by minimized package outline drawings
PNP resistor-equipped transistors; R1 = 4.7 k , R2 = 10 k
CM
i(on)
i(off)
peak collector current conditions added
redefined to V
redefined to V
Change notice
-
-
-
-
-
-
-
I(on)
I(off)
EBO
on-state input voltage
off-state input voltage
PDTA143X series
emitter-base voltage corrected
Supersedes
PDTA143X_SERIES_3
PDTA143X_SERIES_2
PDTA143XEF_1
PDTA143XK_1
PDTA143XE_1
PDTA143XT_1
-
-
-
-
© NXP B.V. 2007. All rights reserved.
10 of 12