PDTC114EE,115 NXP Semiconductors, PDTC114EE,115 Datasheet - Page 5

• Manufacturer Part Number: PDTC114EE,115
• Description: TRANS PNP 50V 100MA SOT416
• Manufacturer: NXP Semiconductors

Specifications of PDTC114EE,115

• Package / Case: SC-75, SOT-416
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934051540115; PDTC114EE T/R; PDTC114EE T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 05
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 10 mA; I
= 100 μA; V
= 10 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
C
C
CB
B
E
B
B
= 0
= 5 mA
CE
CE
= 0.5 mA
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
= 0.3 V
= 5 V
j
= 150 °C
−
−
−
−
30
−
−
2.5
7
0.8
−
MIN.
PDTC114E series
−
−
−
−
−
−
1.1
1.8
10
1
−
TYP.
Product data sheet
100
1
50
400
−
150
0.8
−
13
1.2
2.5
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT