PDTC114EU,115 NXP Semiconductors, PDTC114EU,115 Datasheet - Page 2

• Manufacturer Part Number: PDTC114EU,115
• Description: TRANS PNP 50V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PDTC114EU,115

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934044140115::PDTC114EU T/R::PDTC114EU T/R

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 05
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
−
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC114E
*16
*09
DS
09
09
04
(1)
(1)
PDTC114E series
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
−
−
10
10
PNP COMPLEMENT
TYP.
Product data sheet
50
100
−
−
MAX.
V
mA
kΩ
kΩ
UNIT