PDTC114TT,215 NXP Semiconductors, PDTC114TT,215 Datasheet - Page 9

• Manufacturer Part Number: PDTC114TT,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTC114TT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034900215; PDTC114TT T/R; PDTC114TT T/R

Philips Semiconductors
Table 10:
PDTC114T_SER_8
Product data sheet
Document ID
PDTC114TK_1
PDTC114TE_2
PDTC114TE_1
Revision history
Release date
19970528
19980803
19970711
…continued
Data sheet status
Product
specification
Product
specification
Product
specification
Rev. 08 — 9 February 2006
NPN resistor-equipped transistors; R1 = 10 k , R2 = open
Change notice Doc. number
-
-
-
9397 750 01367 -
9397 750 04123 PDTC114TE_1
9397 750 02628 -
PDTC114T series
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Supersedes
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