PDTA114TEF,115 NXP Semiconductors, PDTA114TEF,115 Datasheet - Page 5

• Manufacturer Part Number: PDTA114TEF,115
• Description: TRANS PNP W/RES 50V SOT-490
• Manufacturer: NXP Semiconductors

Specifications of PDTA114TEF,115

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2101-2; 934057878115; PDTA114TEF T/R

NXP Semiconductors
7. Characteristics
PDTA114T_SER_7
Product data sheet
Fig 1. DC current gain as a function of collector
(1) T
(2) T
(3) T
h
FE
600
400
200
0
V
current; typical values
10
amb
amb
amb
CE
1
= 5 V
= 150 C
= 25 C
= 40 C
1
Table 8.
T
Symbol Parameter
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
FE
CEsat
c
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
Characteristics
10
(1)
(2)
(3)
I
C
006aaa554
(mA)
10
Rev. 07 — 20 April 2007
2
PNP resistor-equipped transistors; R1 = 10 k , R2 = open
Conditions
V
V
V
T
V
V
I
I
V
f = 1 MHz
C
B
j
CB
CE
CE
EB
CE
CB
= 150 C
= 0.5 mA
= 10 mA;
Fig 2. Collector-emitter saturation voltage as a
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
V
(1) T
(2) T
(3) T
CEsat
(V)
10
10
1
1
2
10
I
function of collector current; typical values
C
C
amb
amb
amb
C
/I
E
E
B
B
B
1
= 0 A
= 1 mA
= i
= 0 A
= 0 A
= 0 A;
= 20
= 100 C
= 25 C
= 40 C
e
= 0 A;
PDTA114T series
1
(1)
(2)
(3)
Min
-
-
-
-
200
-
7
-
Typ
-
-
-
-
-
-
10
-
10
I
© NXP B.V. 2007. All rights reserved.
C
(mA)
006aaa555
Max
-
13
3
100
1
50
100
150
10
2
Unit
nA
nA
mV
k
pF
5 of 11
A
A