PDTC123YK,115 NXP Semiconductors, PDTC123YK,115 Datasheet - Page 2

• Manufacturer Part Number: PDTC123YK,115
• Description: TRANS NPN W/RES 50V SC-59A
• Manufacturer: NXP Semiconductors

Specifications of PDTC123YK,115

• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.222
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058839115; PDTC123YK T/R; PDTC123YK T/R

NXP Semiconductors
2. Pinning information
PDTC123Y_SER_4
Product data sheet
Table 3.
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23; SOT323; SOT346; SOT416
1
2
3
SOT883
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
input (base)
GND (emitter)
output (collector)
Rev. 04 — 16 November 2009
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Simplified outline
1
2
PDTC123Y series
1
Transparent
top view
3
001aab348
006aaa144
001aab347
001aab447
2
3
1
2
3
1
2
3
1
2
3
Symbol
© NXP B.V. 2009. All rights reserved.
1
1
1
1
1
R1
R1
R1
R1
R1
006aaa145
006aaa145
006aaa145
sym007
sym007
R2
R2
R2
R2
R2
2 of 11
3
2
3
2
2
3
2
3
2
3