PDTC143TS,126 NXP Semiconductors, PDTC143TS,126 Datasheet - Page 5

• Manufacturer Part Number: PDTC143TS,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC143TS,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057572126; PDTC143TS AMO; PDTC143TS AMO

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
2004 Aug 06
R
I
I
I
h
V
R1
C
SYMBOL
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input resistor
collector capacitance
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
PARAMETER
PARAMETER
V
V
V
V
V
I
f = 1 MHz
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0 A; V
5
CONDITIONS
C
B
C
in free air
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
E
B
B
= 0.25 mA
= 0 A
= 1 mA
CB
= 0 A
= 0 A
= 0 A; T
CONDITIONS
= 10 V;
j
= 150 °C
−
−
−
−
200
−
3.3
−
MIN.
PDTC143T series
VALUE
250
500
500
625
500
500
833
−
−
−
−
−
−
4.7
−
TYP.
Product data sheet
100
1
50
100
−
100
6.1
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
kΩ
pF
UNIT