BCV62A,215 NXP Semiconductors, BCV62A,215 Datasheet - Page 4

• Manufacturer Part Number: BCV62A,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV62A,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: 2 PNP (Dual)
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Base
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933792130215; BCV62A T/R; BCV62A T/R

NXP Semiconductors
BCV62
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol
V
V
f
C
NF
Transistor TR2
V
h
Transistors TR1 and TR2
I
I
T
C1
E2
j
FE
BEsat
BE
EBS
c
= 25
/I
E2
V
V
Device, without emitter resistors, mounted on an FR4 PCB.
BEsat
BE
°
C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Characteristics
Parameter
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
noise figure
emitter-base voltage
DC current gain
current matching
emitter current 2
BCV62
BCV62A
BCV62B
BCV62C
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
…continued
Conditions
I
I
I
I
I
I
V
I
f = 100 MHz
V
I
V
I
f = 1 kHz; B = 200 Hz
V
V
V
I
V
V
C
B
C
B
C
C
C
E
C
E2
CE
CB
CE
CB
CB
CE
CE1
CE1
T
T
= −0.5 mA
= −5 mA
= i
= −10 mA;
= −100 mA;
= −2 mA; V
= −10 mA; V
= −10 mA;
= −200 μA; R
= −0.5 mA;
amb
amb
= −5 V;
= −10 V;
= −5 V;
= 0 V; I
= 0 V; I
= −5 V; I
e
= −5 V;
= −5 V
= 0 A
≤ 25 °C
≤ 150 °C
PNP general-purpose double transistors
E
E
C
= −250 mA
= −10 μA
CE
= −2 mA
CE
S
= −5 V
= 2 kΩ;
= −5 V
[1]
[1]
[2]
[2]
[3]
Min
-
-
−600
-
100
-
-
-
−400
100
100
220
420
0.7
0.7
-
Typ
−700
−850
−650
-
-
4.5
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BCV62
Max
-
-
−750
−820
-
-
10
−1.5
-
800
250
475
800
1.3
1.3
−5
Unit
mV
mV
mV
mV
MHz
pF
dB
V
mV
mA
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