BCV62B,215 NXP Semiconductors, BCV62B,215 Datasheet - Page 3

• Manufacturer Part Number: BCV62B,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV62B,215

• Dc Collector/base Gain Hfe Min: 220
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Collector- Emitter Voltage Vceo Max: - 30 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933792140215::BCV62B T/R::BCV62B T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
BCV62
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Table 8.
T
Symbol
Per transistor
V
V
V
I
I
I
Per device
P
T
T
T
Symbol
R
Symbol
Transistor TR1
I
I
h
V
C
CM
BM
CBO
EBO
j
FE
j
amb
stg
CBO
CEO
EBS
tot
CEsat
th(j-a)
= 25
Device mounted on an FR4 Printed-Circuit Board (PCB).
Device mounted on an FR4 PCB.
°
C unless otherwise specified.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from junction
to ambient
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
Conditions
V
V
T
V
V
I
V
I
I
I
I
C
C
B
C
B
j
CB
CB
EB
CE
CE
= 150 °C
= −0.5 mA
= −5 mA
= −100 μA
= −10 mA;
= −100 mA;
= −5 V; I
= −30 V; I
= −30 V; I
= −5 V;
= −5 V; I
open emitter
open base
T
Conditions
V
Conditions
in free air
amb
CE
= 0 V
PNP general-purpose double transistors
≤ 25 °C
C
C
E
E
= 0 A
= −2 mA
= 0 A
= 0 A;
[1]
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
Min
-
Min
-
-
-
100
100
-
-
Typ
-
Typ
-
-
-
-
-
−75
−250
© NXP B.V. 2010. All rights reserved.
Max
−30
−30
−6
−100
−200
−200
250
150
+150
+150
BCV62
Max
500
Max
−15
−5
−100
-
800
−300
−650
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Unit
K/W
Unit
nA
μA
nA
mV
mV
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