T850H-6G STMicroelectronics, T850H-6G Datasheet - Page 2

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T850H-6G

Manufacturer Part Number
T850H-6G
Description
TRIAC 8A 600V HI TEMP D2PAK
Manufacturer
STMicroelectronics
Series
Snubberless™r
Datasheet

Specifications of T850H-6G

Triac Type
Alternistor - Snubberless
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
75mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
80A, 84A
Current - On State (it (rms)) (max)
8A
Voltage - Gate Trigger (vgt) (max)
1V
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Current - On State (it (rms) (max)
8A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Manufacturer:
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Characteristics
1
Table 1.
Table 2.
1. minimum I
2. for both polarities of A2 referenced to A1.
2/10
V
(dI/dt)c
DSM
Symbol
Symbol
dV/dt
I
P
T(RMS)
I
GT
I
I
dI/dt
V
T
V
I
G(AV)
H
TSM
GM
I
T
I
GD
stg
GT
²
/V
L
(2)
t
j
(1)
(2)
RSM
(2)
GT
Characteristics
Absolute Maximum Ratings
Electrical Characteristics (T
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
V
V
I
I
V
Without snubber, T
²
G
T
G
is guaranted at 20% of I
t Value for fusing
D
D
D
= 500 mA
= 2 x I
= 1.2 I
= 12 V R
= V
= 67% V
DRM
GT
GT
, R
, t
Test Conditions
DRM,
L
r
L
= 33
= 3.3 k
100 ns
gate open, T
j
= 150° C
j
initial = 25° C)
GT
max.
j
= 150° C
Parameter
j
= 25° C, unless otherwise specified)
D
TO-220AB Ins
F = 50 Hz
F = 60 Hz
t
F = 120 Hz
t
t
p
p
p
2
Quadrant
= 10 ms
= 10 ms
= 20 µs
PAK, TO-220AB
I - II - III
I - II - III
I - II - III
I - III
II
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
T
T
t = 20 ms
t = 16.7 ms
T
T
T
T
c
c
j
j
j
j
= 150° C
= 25° C
= 150° C
= 150° C
= 135° C
= 125° C
T835H
1000
35
35
50
80
11
Value
0.15
- 40 to + 150
- 40 to + 150
V
1.0
DRM
Value
+ 100
80
84
42
50
T850H
8
4
1
/V
1500
T835H, T850H
110
50
75
60
14
RRM
A/ms
A/µs
Unit
V/µs
Unit
A
° C
mA
mA
mA
W
A
A
V
A
V
V
²
s

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