T850H-6G STMicroelectronics, T850H-6G Datasheet - Page 4

• Manufacturer Part Number: T850H-6G
• Description: TRIAC 8A 600V HI TEMP D2PAK
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T850H-6G

• Triac Type: Alternistor - Snubberless
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 75mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A, 84A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Current - On State (it (rms) (max): 8A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/10
Figure 3.
Figure 5.
Figure 7.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10000
100
1000
10
100
1
10
0.0
0
0.01
0.5
dI/dt limitation: 50 A/µs
25
T
RMS on-state current versus
ambient temperature (Epoxy
printed circuit board FR4,
copper thickness = 35 µm)
On-state characteristics (maximum
values)
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
j
=150 °C
1.0
50
1.5
0.10
T
p
j
=25 °C
< 10 ms and corresponding
2
2.0
t
T
amb
V
t
P
75
TM
(ms)
(°C)
(V)
2.5
100
1.00
3.0
3.5
V
R
Tj initial=25 °C
T
t0
d
125
j
= 52 m
= 0.80 V
I
max. :
TSM
I²t
S
CU
D²PAK
=180 °
4.0
=1 cm²
10.00
150
4.5
Figure 4.
Figure 6.
Figure 8.
90
80
70
60
50
40
30
20
10
1.0E+02
1.0E+01
1.0E+00
2.5
2.0
1.5
1.0
0.5
0.0
1.0E-01
0
-40
1
1.0E-03
I
H
-20
& I
L
I
GT
Repetitive
T
c
=125 °C
1.0E-02
Variation of thermal impedance
versus pulse duration
Surge peak on-state current versus
number of cycles
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
0
T
Non repetitive
j
20
initial=25 °C
10
1.0E-01
Number of cycles
40
T
1.0E+00
j
t
(°C)
60
P
(s)
80
1.0E+01
100
Z
100
th(j-a)
Z
th(j-c)
T835H, T850H
1.0E+02
120
t=20ms
One cycle
140
1.0E+03
1000
160