NTMD5836NLR2G ON Semiconductor, NTMD5836NLR2G Datasheet - Page 7

• Manufacturer Part Number: NTMD5836NLR2G
• Description: NFET SO8-D 40V 10MO 25MO
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMD5836NLR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Details

0.05
0.04
0.03
0.02
0.01
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
0
1
−50
0
2
8.5 V
Figure 3. On−Resistance vs. Gate−to−Source
V
I
D
GS
10V
= 7 A
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics −
−25
3
V
= 4.5 V
V
DS
GS
T
1
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
Temperature − Channel 2
4
0
Voltage − Channel 2
6.5 V
25
5
5.5 V
2
Channel 2
50
6
3
75
7
TYPICAL PERFORMANCE CURVES
100
8
V
4.5 V
T
I
GS
D
4
3.6 V
T
J
4 V
J
= 7 A
= 25°C
= 3 V
= 25°C
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125
9
150
10
5
7
100000
10000
0.025
0.015
1000
0.03
0.02
100
50
40
30
20
10
0
2
2
5
Figure 4. On−Resistance vs. Drain Current and
Figure 2. Transfer Characteristics − Channel 2
V
V
Figure 6. Drain−to−Source Leakage Current
T
GS
DS
J
T
= 25°C
= 0 V
J
≥ 5 V
V
V
= 25°C
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
6
Gate Voltage − Channel 2
T
vs. Voltage − Channel 2
J
15
I
D,
= 125°C
3
DRAIN CURRENT (A)
T
T
J
J
V
= 150°C
= 125°C
V
GS
GS
10
T
J
= 4.5 V
= 10 V
= −55°C
25
14
4
35
18
5