PIC16F1937-E/MV Microchip Technology, PIC16F1937-E/MV Datasheet - Page 391

• Manufacturer Part Number: PIC16F1937-E/MV
• Description: 14KB Flash, 512B RAM, 256B EEPROM, LCD, 1.8-5.5V 40 UQFN 5x5x0.5mm TUBE
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16F1937-E/MV

• Processor Series: PIC16F
• Core: PIC
• Program Memory Type: Flash
• Program Memory Size: 14 KB
• Data Ram Size: 256 B
• Interface Type: MI2C, SPI, EUSART
• Number Of Timers: 5
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: UQFN-40
• Development Tools By Supplier: MPLAB IDE Software
• Minimum Operating Temperature: - 40 C
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 32MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
• Number Of I /o: 36
• Eeprom Size: 256 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 14x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Lead Free Status / Rohs Status: Details

30.5
 2008-2011 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D111
D112
D113
D114
D115
D116
D117
D118
D119
D120
D121
D122
D123
D124
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
V
I
I
E
V
T
T
T
E
V
T
T
DDP
PPPGM
DDPGM
Sym.
RETD
REF
IW
RETD
PEW
DEW
IHH
D
DRW
P
PR
only and are not tested.
Self-write and Block Erase.
Refer to
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
V
V
Current on MCLR/V
Write
Current on V
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
Section 11.2 “Using the Data EEPROM”
for Bulk Erase
for Write or Row Erase
for Read/Write
for Read
Characteristic
DD
during Erase/Write
PP
PP
during Erase/
/RE3 pin
(2)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
100K
Min.
min.
min.
10K
min.
V
V
V
8.0
1M
2.7
—
—
—
—
—
—
—
DD
DD
DD
PP
output. Circuitry to limit the ICD 2 V
for a more detailed discussion on data EEPROM
Typ†
10M
4.0
40
40
—
—
—
—
—
—
—
—
—
2
PIC16(L)F1934/6/7
Max.
max.
max.
max.
max.
V
V
V
V
9.0
5.0
2.5
1.0
5.0
10
—
—
—
—
—
DD
DD
DD
DD
Units
Year
Year
E/W
E/W
E/W
mA
mA
mA
ms
ms
A
V
V
V
V
V
 +125°C
(Note 3, Note 4)
-40C to +85C
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 1)
Provided no other
specifications are violated
PP
voltage must be
Conditions
DS41364E-page 391