SST25VF512A-33-4I-QAE-T Microchip Technology, SST25VF512A-33-4I-QAE-T Datasheet - Page 11

• Manufacturer Part Number: SST25VF512A-33-4I-QAE-T
• Description: 2.7V To 3.6V 512Kbit SPI Serial Flash 8 TDFN-S 6x5x0.8mm T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF512A-33-4I-QAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 512K (64K x 8)
• Speed: 33MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

512 Kbit SPI Serial Flash
SST25VF512A
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
©2006 Silicon Storage Technology, Inc.
FIGURE 6: B
YTE
-P
ROGRAM
SCK
CE#
SO
SI
MODE 3
MODE 0
S
EQUENCE
MSB
0 1 2 3 4 5 6 7 8
02
HIGH IMPEDANCE
MSB
11
ADD.
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait T
self-timed Byte-Program operation. See Figure 6 for the
Byte-Program sequence.
15 16
ADD.
23 24
ADD.
31 32
MSB
D
BP
IN
1264 F06.0
LSB
for the completion of the internal
39
23
S71264-02-000
-A
0
]. Following the
Data Sheet
1/06