SST25VF512A-33-4I-QAE-T Microchip Technology, SST25VF512A-33-4I-QAE-T Datasheet - Page 18

• Manufacturer Part Number: SST25VF512A-33-4I-QAE-T
• Description: 2.7V To 3.6V 512Kbit SPI Serial Flash 8 TDFN-S 6x5x0.8mm T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF512A-33-4I-QAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 512K (64K x 8)
• Speed: 33MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
O
TABLE 7: DC O
TABLE 8: R
©2006 Silicon Storage Technology, Inc.
Range
Commercial
Industrial
Extended
Symbol
I
I
I
I
I
V
V
V
V
DDR
DDW
SB
LI
LO
PERATING
IL
IH
OL
OH
Symbol
T
T
1. Output shorted for no more than one second. No more than one output shorted at a time.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
PU-READ
PU-WRITE
Parameter
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
R
ANGE
ECOMMENDED
PERATING
Parameter
V
V
DD
DD
Ambient Temp
-40°C to +85°C
-20°C to +85°C
0°C to +70°C
Min to Read Operation
Min to Write Operation
1
C
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
YSTEM
HARACTERISTICS
P
OWER
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
2.7-3.6V
2.7-3.6V
2.7-3.6V
-
UP
V
0.7 V
V
DD
Min
DD
V
T
DD
-0.2
IMINGS
DD
= 2.7-3.6V
Limits
Max
0.2
0.8
15
10
30
18
1
1
AC C
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 20 and 21
Units
mA
mA
µA
µA
µA
V
V
V
V
ONDITIONS OF
Test Conditions
CE#=V
CE#=V
V
V
V
V
I
I
CE#=0.1 V
OL
OH
IN
OUT
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
DD
T
512 Kbit SPI Serial Flash
IN
EST
/0.9 V
=V
DD
DD
DD
DD
Minimum
, V
=V
DD
=V
, V
DD
DD
DD
10
10
or V
DD
DD
=V
@20 MHz, SO=open
Min
=V
Min
SS
DD
DD
Max
SST25VF512A
Max
S71264-02-000
L
= 30 pF
Units
µs
µs
DD
DD
T7.9 1264
T8.0 1264
+0.5V
+2.0V
1/06