RD38F2030W0ZBQ1 Micron Technology Inc, RD38F2030W0ZBQ1 Datasheet - Page 26

• Manufacturer Part Number: RD38F2030W0ZBQ1
• Manufacturer: Micron Technology Inc

Specifications of RD38F2030W0ZBQ1

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Intel® Wireless Flash Memory (W18/W30 SCSP)
Table 16.
June 2005
26
Notes:
1.
2.
3.
4.
5.
6.
7.
W1
W2
W3
W4
W5
W6
W7
W8
W9
#
See
A write occurs during the overlap (t
goes low with asserting R-UB# or R-LB# for single byte operation or simultaneously asserting R-UB# and R-LB# for
double byte operation. A write ends at the earliest transition when P-CS# goes high and R-WE# goes high.
t
t
t
going high.
W3 is 70 ns for continuous write operations over 50 times.
Applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1, 38F2030W0ZTQ2,
38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0, 38F1030W0YTQE, 38F1030W0YBQE.
WP
AS
WR
is measured from the address valid to the beginning of a write.
is measured from P-CS# going low to end of a write.
is measured from the end of a write to the address change. t
Symbol
Figure 9, “AC Waveform PSRAM Write Operation”
t
t
t
t
t
t
t
t
t
WC
WP
DW
CW
WR
BW
AW
DH
AS
PSRAM AC Characteristics—Write Operations
Write Cycle Time
Address Setup to R-WE#
(P-CS#) and R-UB#, R-LB# going low
R-WE#(P-CS#) Pulse Width
Data to Write Time Overlap
Address Setup to R-WE#
(P-CS#) Going High
P-CS# (R-WE#) Setup to R-WE# (P-CS#)
Going High
Data Hold from R-WE#
(P-CS#) High
Write Recovery
R-UB#, R-LB# Setup to R-WE# (P-CS#) Going
High
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
Parameter
WP
) of low P-CS# and low R-WE#. A write begins when P-CS# goes low and R-WE#
7
.
WR
Min
applied in case a write ends as P-CS# or R-WE#
70
55
35
60
60
60
0
0
0
1.8 V
Max
–
–
–
–
–
–
–
–
–
Min
70
55
35
60
60
60
0
0
0
3.0 V
Max
–
–
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Datasheet
Notes
1,2,3
1,4
1,5
1
1
1
1
1
1