RD38F2030W0ZBQ1 Micron Technology Inc, RD38F2030W0ZBQ1 Datasheet - Page 44

• Manufacturer Part Number: RD38F2030W0ZBQ1
• Manufacturer: Micron Technology Inc

Specifications of RD38F2030W0ZBQ1

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Intel® Wireless Flash Memory (W18/W30 SCSP)
Table 3.
June 2005
44
PSRAM Special Write Constraints
Need either R-WE# high or P-CS# high for at least t
time, for every 4us window during write operations.
R-OE# high to R-WE# low in active mode (P-CS# low)
R-WE# high to R-OE# low in active mode (P-CS# low)
Address Skew time (unstable address with P-CS# low)
Note:
1.
Since specs are defined for t
is switched from high to low following address determination, or when the address is changed after P-CS# is
switched from low to high.
a. When switching P-CS# from high to low, t
b. When switching P-CS# from low to high, t
c. When P-CS# is fixed to low, t
Address skew time (t
next address is determined.
the P-CS# high input point.
determined.
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
Description
SKEW
SKEW
only when P-CS# is active, t
) indicates the following three types of time depending on the condition.
SKEW
is the time from the address start point until the next address is
SKEW
WC
SKEW
is the time from the P-CS# low input point until the
is the time from the address change start point to
SKEW
Min
N/A
10
0
–
is not subject to limitations when P-CS#
10,000
10,000
Max
N/A
10
Unit
ns
ns
ns
–
Datasheet
Notes
1