MT47H128M16RT-25E:C Micron Technology Inc, MT47H128M16RT-25E:C Datasheet - Page 122

• Manufacturer Part Number: MT47H128M16RT-25E:C
• Description: DRAM Chip DDR2 SDRAM 2G-Bit 128Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr
• Series: -r

Specifications of MT47H128M16RT-25E:C

• Package: 84FBGA
• Density: 2 Gb
• Address Bus Width: 17 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 800 MHz
• Maximum Random Access Time: 0.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (128M x 16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Package / Case: 84-TFBGA
• Lead Free Status / RoHS Status: Compliant

Figure 73: WRITE-to-Power-Down or Self Refresh Entry
Figure 74: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
CK#
CKE
A10
CK#
CKE
A10
DQ
DQ
CK
CK
WRITE
Valid
Valid
WRITE
T0
T0
Notes:
Note:
NOP
NOP
T1
T1
WL = 3
WL = 3
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may oc-
2. WR is programmed through MR9–MR11 and represents (
cur 1 x
to next integer
NOP
NOP
T2
T2
t
CK later at Ta1, prior to
NOP
t
DO
NOP
DO
CK.
T3
T3
DO
DO
122
Valid
Valid
DO
DO
T4
T4
t
RP being satisfied.
DO
DO
Indicates a break in
time scale
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
Valid
T5
T5
2Gb: x4, x8, x16 DDR2 SDRAM
WR 2
Valid 1
Valid
t WTR
Ta0
T6
Transitioning Data
t
self refresh entry 1
self refresh entry
Power-down or
WR [MIN] ns/
Power-down or
Transitioning Data
Power-Down Mode
© 2006 Micron Technology, Inc. All rights reserved.
NOP 1
NOP
Ta1
T7
t
CK) rounded up
t CKE (MIN)
t CKE (MIN)
Ta2
T8
Don’t Care
Don’t Care