MT49H32M9BM-25 Micron Technology Inc, MT49H32M9BM-25 Datasheet - Page 69

• Manufacturer Part Number: MT49H32M9BM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M9BM-25

• Organization: 32Mx9
• Density: 288Mb
• Address Bus: 22b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Update-DR
Instruction Register States
Figure 43:
Figure 44:
PDF: 09005aef80a41b59/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN
TAP Controller State Diagram
TAP Controller Block Diagram
Notes:
When the EXTEST instruction is selected, there are latched parallel outputs of the
boundary-scan shift register that only change state during the update-DR controller
state.
The instruction register states of the TAP controller are similar to the data register states.
The desired instruction is serially shifted into the instruction register during the shift-IR
state and is loaded during the update-IR state.
1. x = 112 for all configurations.
TMS
TCK
TDI
1
0
Test-logic
Run-test/
288Mb: x9, x18, x36 2.5V V
reset
Idle
0
Selection
circuitry
1
TAP controller
31
x 1
1
0
Identification register
Boundry scan register
30
7
Instruction register
.
Capture-DR
Update-DR
29
Pause-DR
6
Exit1-DR
Exit2-DR
Shift-DR
.
DR-scan
1
Select
Bypass register
5
0
0
1
0
1
1
.
.
4
0
.
.
68
3
.
.
2
2
2
1
1
1
1
1
0
0
0
0
0
0
IEEE 1149.1 Serial Boundary Scan (JTAG)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Selection
circuitry
1
0
EXT
Capture-IR
Update-IR
Pause-IR
1
Exit1-IR
Exit2-IR
Shift-IR
IR-scan
Select
, 1.8V V
0
0
1
0
1
1
0
TDO
1
1
0
0
DD
, HSTL, CIO, RLDRAM II
©2003 Micron Technology, Inc. All rights reserved.