K4S280832E-TC75 Samsung Semiconductor, K4S280832E-TC75 Datasheet - Page 10

no-image

K4S280832E-TC75

Manufacturer Part Number
K4S280832E-TC75
Description
Manufacturer
Samsung Semiconductor
Type
SDRAMr
Datasheet

Specifications of K4S280832E-TC75

Organization
16Mx8
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
110mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K4S280832E-TC75
Manufacturer:
SAMSUNG
Quantity:
5 300
Part Number:
K4S280832E-TC75
Manufacturer:
SAMSUNG
Quantity:
5 300
Part Number:
K4S280832E-TC75
Manufacturer:
SAMSUNG
Quantity:
10
Part Number:
K4S280832E-TC75
Manufacturer:
SAMSUNG
Quantity:
50
AC OPERATING TEST CONDITIONS
SDRAM 128Mb E-die (x4, x8, x16)
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Notes :
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output data
Output
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
(Fig. 1) DC output load circuit
and then rounding off to the next higher integer.
870Ω
Parameter
Parameter
3.3V
1200Ω
50pF
CAS latency=3
CAS latency=2
V
V
OH
OL
(DC) = 0.4V, I
(V
(DC) = 2.4V, I
t
t
t
t
t
t
t
t
t
RAS
RRD
RCD
t
CCD
Symbol
t
RAS
RDL
CDL
DAL
BDL
DD
RP
RC
(min)
(min)
(max)
= 3.3V ± 0.3V, T
(min)
(min)
(min)
(min)
(min)
(min)
(min)
(min)
OL
OH
= 2mA
= -2mA
- 60 (x16 only)
A
= 0 to 70°C)
12
18
18
42
60
-
See Fig. 2
tr/tf = 1/1
2.4/0.4
Value
2 CLK + tRP
1.4
1.4
Output
Version
100
2
1
1
1
2
(Fig. 2) AC output load circuit
- 75
Rev. 1.4 February. 2004
15
20
20
45
65
1
Z0 = 50Ω
CMOS SDRAM
Unit
CLK
CLK
CLK
CLK
ns
ns
ns
ns
ns
ea
us
-
Vtt = 1.4V
Unit
50Ω
ns
50pF
V
V
V
Note
1
1
1
1
1
2
2
2
3
4

Related parts for K4S280832E-TC75