BAP70AM.115 NXP Semiconductors, BAP70AM.115 Datasheet - Page 3

• Manufacturer Part Number: BAP70AM.115
• Manufacturer: NXP Semiconductors
• Type: Attenuatorr

Specifications of BAP70AM.115

• Configuration: Double Dual Series
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 300mW
• Operating Temperature Classification: Military
• Reverse Voltage: 50V
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 100@0.5mAOhm
• Maximum Series Resistance @ Maximum If: 1.9@100mAOhm
• Typical Carrier Life Time: 1.25us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
7. Characteristics
Table 6.
T
BAP70AM
Product data sheet
Symbol
V
I
C
r
τ
L
R
D
amb
L
Fig 1.
S
F
d
= 25
(fF)
C
600
500
400
300
200
d
°
0
f = 1 MHz; T
voltage; typical values
Diode capacitance as a function of reverse
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
5
j
= 25 °C.
10
15
Conditions
I
V
see
see
when switched from I
I
I
I
F
R
R
F
R
All information provided in this document is subject to legal disclaimers.
V
V
V
V
I
I
I
I
= 50 mA
= 100 mA; f = 100 MHz
= 6 mA; R
= 3 mA
F
F
F
F
001aaa461
V
= 50 V
R
R
R
R
R
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 5 V
= 20 V
(V)
Rev. 2 — 7 September 2010
20
1; f = 1 MHz;
2; f = 100 MHz;
L
= 100 Ω; measured at
F
= 10 mA to
Fig 2.
(Ω)
r
10
10
D
10
10
1
3
2
f = 100 MHz; T
Diode forward resistance as a function of
forward current; typical values
−1
1
j
= 25 °C.
Min
-
-
-
-
-
-
-
-
-
-
-
-
Silicon PIN diode array
Typ
0.9
-
570
400
270
200
77
40
5.4
1.4
1.25
0.6
10
BAP70AM
© NXP B.V. 2010. All rights reserved.
I
F
(mA)
Max
1.1
< 100
-
-
-
250
100
50
7
1.9
-
-
mce007
10
2
Unit
V
nA
fF
fF
fF
fF
Ω
Ω
Ω
Ω
μs
nH
3 of 8