BB207 NXP Semiconductors, BB207 Datasheet - Page 2

Variable capacitance double diode with a common cathode, fabricated in silicon planar technology and encapsulated in the SOT23 small plastic SMD package

BB207

Manufacturer Part Number
BB207
Description
Variable capacitance double diode with a common cathode, fabricated in silicon planar technology and encapsulated in the SOT23 small plastic SMD package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BB207

Operating Temperature Classification
Military
Mounting
Surface Mount
Operating Temperature (max)
125C
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BB207
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BB207
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
4. Marking
5. Limiting values
6. Characteristics
Table 5:
T
9397 750 13003
Product data sheet
Symbol
Per diode
I
r
C
------------------- -
C
R
s
j
C
d
= 25 C unless otherwise specified.
d 7.5V
d 1V
Electrical Characteristics
Parameter
reverse current
diode series resistance
diode capacitance
capacitance ratio
Table 3:
[1]
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BB207
Symbol
Per diode
V
I
T
T
F
stg
j
R
* = p: made in Hong Kong.
* = w: made in China.
Marking
Limiting values
Parameter
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
Conditions
V
V
f = 100 MHz; V
V
V
V
V
f = 1 MHz
R
R
R
R
R
R
= 15 V; see
= 15 V; T
= 1 V; f = 1 MHz; see
= 3 V; f = 1 MHz; see
= 7.5 V; f = 1 MHz; see
= 8 V; f = 1 MHz; see
Rev. 02 — 27 April 2004
j
= 85 C; see
R
Figure 2
= 3 V
Figure 1
Figure 1
Figure 1
Figure 2
Figure 1
Conditions
Marking code
*13
FM variable capacitance double diode
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
76
25.5
2.6
Min
-
-
55
55
Typ
0.2
81
50.5
27.6
26.3
Max
15
20
+150
+125
Max
10
200
0.4
86
29.7
3.3
BB207
Unit
V
mA
C
C
Unit
nA
nA
pF
pF
pF
pF
2 of 7

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