BB207 /T3 NXP Semiconductors, BB207 /T3 Datasheet - Page 2

BB207 /T3

Manufacturer Part Number
BB207 /T3
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BB207 /T3

Operating Temperature Classification
Military
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
125C
Lead Free Status / RoHS Status
Compliant
Philips Semiconductors
4. Marking
5. Limiting values
6. Characteristics
Table 5:
T
9397 750 13003
Product data sheet
Symbol
Per diode
I
r
C
------------------- -
C
R
s
j
C
d
= 25 C unless otherwise specified.
d 7.5V
d 1V
Electrical Characteristics
Parameter
reverse current
diode series resistance
diode capacitance
capacitance ratio
Table 3:
[1]
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BB207
Symbol
Per diode
V
I
T
T
F
stg
j
R
* = p: made in Hong Kong.
* = w: made in China.
Marking
Limiting values
Parameter
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
Conditions
V
V
f = 100 MHz; V
V
V
V
V
f = 1 MHz
R
R
R
R
R
R
= 15 V; see
= 15 V; T
= 1 V; f = 1 MHz; see
= 3 V; f = 1 MHz; see
= 7.5 V; f = 1 MHz; see
= 8 V; f = 1 MHz; see
Rev. 02 — 27 April 2004
j
= 85 C; see
R
Figure 2
= 3 V
Figure 1
Figure 1
Figure 1
Figure 2
Figure 1
Conditions
Marking code
*13
FM variable capacitance double diode
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
76
25.5
2.6
Min
-
-
55
55
Typ
0.2
81
50.5
27.6
26.3
Max
15
20
+150
+125
Max
10
200
0.4
86
29.7
3.3
BB207
Unit
V
mA
C
C
Unit
nA
nA
pF
pF
pF
pF
2 of 7

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