BSM150GD60DLC Infineon Technologies, BSM150GD60DLC Datasheet - Page 6

• Manufacturer Part Number: BSM150GD60DLC
• Description: IGBT Modules 600V 150A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM150GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 180 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
2
Eon
Eoff
Erec
50
Eon
Eoff
Erec
4
BSM 150 GD 60 DLC
100
6
6 (8)
R
I
150
C
G
E
I
[A]
C
[ ]
= 150A , V
on
E
= f (R
R
G,on
on
8
= f (I
= 1,5
CC
G
= 300V , T
), E
C
200
= = = = R
), E
off
G,off
= f (R
= 1,5 , V
off
vj
10
= 125°C
= f (I
G
), E
CC
C
), E
= 300V, T
250
rec
rec
= f (R
12
= f (I
vj
= 125°C
G
C
)
)
BSM 150 GD 60 DLC
300
14
2000-02-08