BSM150GD60DLC Infineon Technologies, BSM150GD60DLC Datasheet - Page 8

• Manufacturer Part Number: BSM150GD60DLC
• Description: IGBT Modules 600V 150A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM150GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 180 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Econo 3
IS8
P+ /
N- /
21
20
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
1
2
3
4
3.81
BSM 150 GD 60 DLC
1 2 3
connections to be made externally
19
15.24
19.05 3.81
4 x 19.05 = 76.2
18
4
5 x 15.24 =76.2
5
6
7
8
5
8 (8)
118.11
121.5
6
110
99.9
94.5
119
17
7 8 9
1.15x1.0
12
10
11
16
9
10
11
15
12
19
17
15
P+ /
N- /
13
14
BSM 150 GD 60 DLC
2000-02-08