BSM200GB120DLC Infineon Technologies, BSM200GB120DLC Datasheet

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... Daten preliminary data V 1200 V CES I 200 A C,nom. I 420 400 A CRM P 1,3 kW tot V +/- 20V V GES I 200 400 A FRM 2,5 kV ISOL min. typ. max 2,1 2 sat - 2 4,5 5,5 6,5 V GE(th ies res I - 0,02 0,5 mA CES - 0 400 nA GES DB_BSM200GB120DLC.xls ...

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... mWs mWs off I - 1250 - sCE CC‘+EE‘ min. typ. max 1 240 - 300 - µ µ mWs rec - 14 - mWs DB_BSM200GB120DLC.xls ...

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... BSM200GB120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = grease terminals M6 3(8) vorläufige Daten preliminary data min. typ. max 0,09 K/W thJC - - 0,18 K 0,01 - K/W thCK 150 ° -40 - 125 ° -40 - 150 °C stg 275 2 420 g DB_BSM200GB120DLC.xls ...

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... VGE = 15V VGE = 13V 250 VGE = 11V VGE = 9V VGE = 7V 200 150 100 50 0 0,0 0,5 1,0 BSM200GB120DLC 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 3,5 V [V] CE 4(8) vorläufige Daten ) CE preliminary data 3,0 3,5 4 125°C vj 4,0 4,5 5,0 DB_BSM200GB120DLC.xls ...

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... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 400 350 300 250 200 150 100 50 0 0,0 0,5 BSM200GB120DLC 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [V] F 5(8) vorläufige Daten preliminary data ) 2,5 3,0 DB_BSM200GB120DLC.xls ...

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... Schaltverluste (typisch) Switching losses (typical) 100 90 Eoff Eon 80 Erec BSM200GB120DLC off C V =15V =4 600V gon goff CE 150 200 250 I [ off V =15V , I = 200A , V = 600V , 6(8) vorläufige Daten preliminary data = rec C = 125°C j 300 350 400 ) , rec G = 125° DB_BSM200GB120DLC.xls ...

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... V = 15V 400 600 800 1000 V [V] CE 7(8) vorläufige Daten preliminary data Zth:Diode Zth:IGBT 10 100 3 4 19,37 0,04 0,043 1,014 37,92 19,74 0,033 0,997 = 4,7 Ohm 125° 1200 1400 DB_BSM200GB120DLC.xls ...

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... Technische Information / Technical Information IGBT-Module BSM200GB120DLC IGBT-Modules vorläufige Daten preliminary data 8(8) DB_BSM200GB120DLC.xls ...