BSM200GB120DLC Infineon Technologies, BSM200GB120DLC Datasheet - Page 2

• Manufacturer Part Number: BSM200GB120DLC
• Description: IGBT Modules 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB120DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 420 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1550 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
Charakteristische Werte / Characteristic values
Diode / Diode
Technische Information / Technical Information
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
T
I
I
I
V
V
I
V
V
I
V
V
BSM200GB120DLC
C
C
C
C
C
C
P
F
F
F
F
F
Vj
C
GE
GE
GE
GE
GE
GE
GE
GE
G
G
R
R
R
R
R
R
= 200A, V
= 200A, V
= 200A, - di
= 200A, - di
= 200A, - di
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 200A, V
=25°C
= 4,7 , T
= 4,7 , T
= 600V, VGE = -15V, T
= 600V, VGE = -15V, T
= 600V, VGE = -15V, T
= 600V, VGE = -15V, T
= 600V, VGE = -15V, T
= 600V, VGE = -15V, T
125°C, V
10µsec, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
CE
CE
CE
CE
CE
CE
GE
GE
vj
vj
CC
F
F
F
GE
= 125°C, L
= 125°C, L
/dt = 4000A/µsec
/dt = 4000A/µsec
/dt = 4000A/µsec
G
G
G
G
G
G
G
G
=900V, V
= 0V, T
= 0V, T
= 600V
= 600V
= 600V
= 600V
= 600V, V
= 600V, V
= 4,7 , T
= 4,7 , T
= 4,7 , T
= 4,7 , T
= 4,7 , T
= 4,7 , T
= 4,7 , T
= 4,7 , T
2(8)
15V, R
vj
vj
= 25°C
= 125°C
CEmax
S
S
GE
GE
G
vj
vj
vj
vj
vj
vj
vj
vj
= 60nH
= 60nH
vj
vj
vj
vj
vj
vj
= 4,7
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
= 15V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
=V
CES
-L
sCE
·dI/dt
R
L
CC‘+EE‘
t
t
E
E
E
I
I
d,off
V
d,on
Q
sCE
RM
SC
t
t
rec
on
off
r
f
F
r
vorläufige Daten
preliminary data
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
1250
typ.
0,05
0,06
0,05
0,07
0,57
0,57
0,04
0,05
0,60
240
300
1,8
1,7
22
23
25
23
42
14
6
DB_BSM200GB120DLC.xls
max.
max.
2,3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mWs
mWs
mWs
mWs
m
µAs
µAs
nH
µs
µs
µs
µs
µs
µs
µs
µs
A
V
V
A
A